Benchmarks
Nifty23,398.10-79.71

FEATURED FUNDS★★★★★

Motilal Oswal Midcap Fund Direct-Growth

5Y Return
21.93 %

Invest Now

Enter search text:

Business News›News›Defence›DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delivers up to 30W power: Defence Ministry report

Read Today's Paper

DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delivers up to 30W power: Defence Ministry report
Synopsis

India's Defence Research and Development Organisation has made remarkable progress with the successful demonstration of cutting-edge high-frequency defence technology. This advancement is key to strengthening national security by fortifying next-generation radar and electronic warfare systems. The use of Gallium Nitride chips, known for their exceptional power and speed compared to traditional silicon, highlights the country's journey towards semiconductor self-reliance in defence applications.

ANI

The Defence Research and Development Organisation (DRDO) has successfully demonstrated and implemented indigenous advanced technology for high-frequency defence systems that can support next-generation radars and electronic warfare systems, revealed the Ministry of Defence's annual report for FY25-26.



The technology involves advanced components that help generate, amplify, receive and control high-frequency signals, with applications in radar, electronic warfare, communications, intelligence, surveillance, reconnaissance and unmanned systems.



"A single indigenous GaN chip, measuring 3.5 x 3 mm can deliver up to 30 watts of power and operate at speeds 300 times faster than silicon. Indigenous GaN Nitride Monolithic Microwave Integrated Circuit (MMIC) technology for application upto X band has been successfully demonstrated and implemented. Indigenously fabricated S-band GaN High Electron-Mobility (HEMT) power bars, power Amplifier, low noise Amplifier and switch MMICs have been designed, fabricated and demonstrated," the MoD report said.

Gallium Nitride (GaN) is a semiconductor technology suited to high-frequency and high-power applications. A single indigenous GaN chip measuring 3.5 x 3 mm can deliver up to 30 watts of power and operate at speeds 300 times faster than silicon. GaN components are used in applications such as radar transmitters and electronic warfare jammers, which require high power, high frequency and compact components.



The latest development builds on work by the Solid State Physics Laboratory (SSPL), a DRDO laboratory, which has developed indigenous processes for growing and manufacturing 4-inch-diameter Silicon Carbide (SiC) wafers and fabricating GaN HEMTs up to 150 Watts and MMICs up to 40 Watts for applications up to X-band frequencies.




The Ministry of Defence had earlier said GaN/SiC technology provides improved efficiency, reduced size and weight and enhanced performance, making it important for future combat systems, radars, electronic warfare systems and communications.

Indigenous GaN-on-SiC-based MMICs with limited production capability have also been established at GAETEC, Hyderabad. The multifunctional MMICs cater to applications in strategic systems, space, aerospace and 5G and satellite communications, according to the earlier statement from MoD.

The development of commercially viable SiC and GaN-based MMIC technology was described by the ministry as a milestone towards self-reliance in semiconductor technology.



The latest disclosure also comes against the backdrop of efforts under the Innovations for Defence Excellence (iDEX) initiative to develop indigenous GaN components for defence applications.



Under iDEX, a contract was signed with Agnit Semiconductors Private Limited for the design and development of advanced GaN semiconductors for next-generation wireless transmitters used in defence applications ranging from radars to electronic warfare jammers.



The Ministry of Defence had said that almost all GaN components were imported, with the technology being sensitive and cutting-edge and its export controlled and restricted by several countries.The proposal sought to design, develop and manufacture GaN components for defence applications in India using indigenous GaN technology, with the aim of strengthening domestic design and development capabilities and creating potential for defence exports.



The contract was signed by then Additional Secretary (Defence Industries Production) and CEO, Defence Innovation Organisation, T Natarajan, with Agnit Semiconductors Private Limited in New Delhi on December 1, 2023, in the presence of Former Defence Secretary Giridhar Aramane and senior civil and military officials of the Ministry of Defence.

Add as a Reliable and Trusted News Source
Add Now!

(You can now subscribe to our WhatsApp channel)

(You can now subscribe to our WhatsApp channel)


Read More News on
GaN MMIC technologyDRDO GaN technologyindigenous GaN chipGallium Nitride semiconductorDRDO high frequency technologyelectronic warfare systemsnext generation radarsdefence semiconductor technologyMake in India defence technology

Enter search text:

Stories you might be interested in